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Capacitance method for determination of LDD mosfet geometrical parametersVITANOV, P; DIMITROVA, T; KAMBUROVA, R et al.Solid-state electronics. 1992, Vol 35, Num 7, pp 985-991, issn 0038-1101Article

Hot carriers' effects in short channel devicesPETROVA, R; KAMBUROVA, R; VITANOV, P et al.Microelectronics and reliability. 1986, Vol 26, Num 1, pp 155-162, issn 0026-2714Article

Soliton interactions in gyrotropic crystalsSTOYCHEV, K. T; PRIMATAROWA, M. T; KAMBUROVA, R. S et al.Journal of physics. Condensed matter (Print). 2000, Vol 12, Num 50, pp 10429-10440, issn 0953-8984Article

Carrier mobility determination in short-channel MOS devicesPETROVA, R. S; KAMBUROVA, R. S; NACHEV, I. S et al.Microelectronics. 1985, Vol 16, Num 6, pp 31-38, issn 0026-2692Article

Hot electron effects in narrow width MOS devicesPETROVA, R. S; KAMBUROVA, R. S; VITANOV, P. K et al.Microelectronics. 1987, Vol 18, Num 6, pp 25-30, issn 0026-2692Article